IPI50R299CP coolmos ? power transistor features ? lowest figure of merit r on x q g ? ultra low gate charge ? extreme dv/dt rated ? high peak current capability ? pb-free lead plating; rohs compliant ? quailfied according to jedec 1) for target applications coolmos cp is designed for: ? hard- & soft switching smps topologies ? ccm pfc for notebook adapter, pdp and lcd tv ? pwm for notebook adapter, pdp and lcd tv maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =100 c pulsed drain current 2) i d,pulse t c =25 c avalanche energy, single pulse e as i d =4.4 a, v dd =50 v 289 mj avalanche energy, repetitive t ar 2),3) e ar i d =4.4 a, v dd =50 v avalanche current, repetitive t ar 2),3) i ar a mosfet d v /d t ruggedness d v /d t v ds =0...400 v v/ns gate source voltage v gs static v ac (f>1 hz) power dissipation p tot t c =25 c w operating and storage temperature t j , t stg c mounting torque m3 and m3.5 screws 60 ncm value 12 8 26 30 104 -55 ... 150 0.44 4.4 50 20 v ds @t jmax 550 v r ds(on),max 0.299 ? q g,typ 23 nc product summary type package marking IPI50R299CP pg-to262 5r299p to-262-3 rev. 2.0 page 1 2007-11-20
IPI50R299CP maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous diode forward current i s a diode pulse current 2) i s,pulse 26 reverse diode d v /d t 4) d v /d t 15 v/ns parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 1.2 k/w r thja leaded - - 62 soldering temperature, wavesoldering only allowed at leads t sold 1.6 mm (0.063 in.) from case for 10 s - - 260 c electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 500 - - v gate threshold voltage v gs(th) v ds = v gs , i d =0.44 ma 2.5 3 3.5 zero gate voltage drain current i dss v ds =500 v, v gs =0 v, t j =25 c --1a v ds =500 v, v gs =0 v, t j =150 c -10- gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =6.6 a, t j =25 c - 0.27 0.299 ? v gs =10 v, i d =6.6 a, t j =150 c - 0.68 - gate resistance r g f =1 mhz, open drain - 2.2 - ? values thermal resistance, junction - ambient value t c =25 c 6.6 rev. 2.0 page 2 2007-11-20
IPI50R299CP parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 1190 - pf output capacitance c oss -53- effective output capacitance, energy related 5) c o(er) -50- effective output capacitance, time related 6) c o(tr) - 110 - turn-on delay time t d(on) -35-ns rise time t r -14- turn-off delay time t d(off) -80- fall time t f -12- gate charge characteristics gate to source charge q gs -5-nc gate to drain charge q gd -7- gate charge total q g -2331 gate plateau voltage v plateau - 5.2 - v reverse diode diode forward voltage v sd v gs =0 v, i f =6.6 a, t j =25 c - 0.9 1.2 v reverse recovery time t rr - 260 - ns reverse recovery charge q rr - 2.6 - c peak reverse recovery current i rrm -21-a 1) j-std20 and jesd22 2) pulse width t p limited by t j,max 3) repetitive avalanche causes additional power losses that can be calculated as p av = e ar * f. 6) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss. 4) i sd i d , d i /d t 200a/s, v dclink =400v, v peak < v (br)dss , t j < t jmax , identical low and high side switch v r =400 v, i f = i s , d i f /d t =100 a/s 5) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss. values v gs =0 v, v ds =100 v, f =1 mhz v dd =400 v, v gs =10 v, i d =6.6 a, r g =27.9 ? v dd =400 v, i d =6.6 a, v gs =0 to 10 v v gs =0 v, v ds =0 v to 400 v rev. 2.0 page 3 2007-11-20
IPI50R299CP 1 power dissipation 2 safe operating area p tot =f( t c ) i d =f( v ds ); t c =25 c; d =0 parameter: t p 3 max. transient thermal impedance 4 typ. output characteristics z (thjc) =f(t p ); i d =f( v ds ); t j =25 c parameter: d=t p / t parameter: v gs 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t c [c] p tot [w] 1 s 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 2 10 1 10 0 10 -1 v ds [v] i d [a] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 4.5 v 5 v 5.5 v 6 v 7 v 8 v 10 v 20 v 0 5 10 15 20 25 30 0 5 10 15 20 v ds [v] i d [a] limited by on-state resistance rev. 2.0 page 4 2007-11-20
IPI50R299CP 5 typ. output characteristics 6 typ. drain-source on-state resistance i d =f( v ds ); t j =150 c r ds(on) =f( i d ); t j =150 c parameter: v gs parameter: v gs 7 drain-source on-state resistance 8 typ. transfer characteristics r ds(on) =f( t j ); i d =6.6 a; v gs =10 v i d =f( v gs ); | v ds |>2| i d | r ds(on)max parameter: t j typ 98 % 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -60 -20 20 60 100 140 180 t j [c] r ds(on) [ ? ] 25 c 150 c 0 5 10 15 20 25 30 35 40 0246810 v gs [v] i d [a] 4.5 v 5 v 5.5 v 6 v 7 v 8 v 10 v 20 v 0 3 6 9 12 15 0 5 10 15 20 v ds [v] i d [a] 5.5 v 6 v 6.5 v 7 v 10 v 0.5 0.7 0.9 1.1 1.3 1.5 0 5 10 15 20 25 30 i d [a] r ds(on) [ ? ] rev. 2.0 page 5 2007-11-20
IPI50R299CP 9 typ. gate charge 10 forward characteristics of reverse diode v gs =f( q gate ); i d =6.6 a pulsed i f =f( v sd ) parameter: v dd parameter: t j 11 avalanche energy 12 drain-source breakdown voltage e as =f( t j ); i d =4.4 a; v dd =50 v v br(dss) =f( t j ); i d =0.25 ma 25 c 150 c 25 c, 98% 150 c, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f [a] 100 v 400 v 0 2 4 6 8 10 0 5 10 15 20 25 q gate [nc] v gs [v] 440 460 480 500 520 540 560 580 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] 0 50 100 150 200 250 300 25 75 125 175 t j [c] e as [mj] rev. 2.0 page 6 2007-11-20
IPI50R299CP 13 typ. capacitances 14 typ. coss stored energy c =f( v ds ); v gs =0 v; f =1 mhz e oss = f (v ds ) 0 1 2 3 4 5 6 0 100 200 300 400 500 v ds [v] e oss [j] ciss coss crss 10 4 10 3 10 2 10 1 10 0 0 100 200 300 400 500 v ds [v] c [pf] rev. 2.0 page 7 2007-11-20
IPI50R299CP definition of diode switching characteristics rev. 2.0 page 8 2007-11-20
IPI50R299CP pg-to262-3: outlines rev. 2.0 page 9 2007-11-20
IPI50R299CP published by infineon technologies ag 81726 munich, germany ? 2007 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 2.0 page 10 2007-11-20
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